TP65H300G4LSG

GANFET N-CH 650V 6.5A 3PQFN
NOVA Part#:
312-2274302-TP65H300G4LSG
Manufacturer:
Manufacturer Part No:
TP65H300G4LSG
Standard Package:
240
Technical Datasheet:

Available download format

N-Channel 650 V 6.5A (Tc) 21W (Tc) Surface Mount 3-PQFN (8x8)

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerTransphorm
RoHS 1
PackagingTape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package 3-PQFN (8x8)
Base Product Number TP65H300
TechnologyGaNFET (Gallium Nitride)
Series-
Current - Continuous Drain (Id) @ 25°C 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)8V
Rds On (Max) @ Id, Vgs 312mOhm @ 5A, 8V
Vgs(th) (Max) @ Id 2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 9.6 nC @ 8 V
FET Feature-
Package / Case3-PowerDFN
Vgs (Max)±18V
FET TypeN-Channel
Drain to Source Voltage (Vdss)650 V
Input Capacitance (Ciss) (Max) @ Vds 760 pF @ 400 V
Power Dissipation (Max) 21W (Tc)
Other Names1707-TP65H300G4LSG
1707-TP65H300G4LSG-ND
1707-TP65H300G4LSGCT
1707-TP65H300G4LSGTR
1707-TP65H300G4LSGDKR

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