TP65H070LDG

GANFET N-CH 650V 25A 3PQFN
NOVA Part#:
312-2264827-TP65H070LDG
Manufacturer:
Manufacturer Part No:
TP65H070LDG
Standard Package:
60
Technical Datasheet:

Available download format

N-Channel 650 V 25A (Tc) 96W (Tc) Surface Mount 3-PQFN (8x8)

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerTransphorm
RoHS 1
Operating Temperature -55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package 3-PQFN (8x8)
Base Product Number TP65H070
TechnologyGaNFET (Cascode Gallium Nitride FET)
SeriesTP65H070L
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs 85mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs 9.3 nC @ 10 V
FET Feature-
Package / Case3-PowerDFN
Vgs (Max)±20V
FET TypeN-Channel
Drain to Source Voltage (Vdss)650 V
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 400 V
Power Dissipation (Max) 96W (Tc)

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