Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.
Manufacturer Part No
SKU
Description
Manufacturer
PDF
Price
302-2021025-BFS 460L6 E6327
RF TRANS 2NPN 5.8V 22GHZ TSLP-6
Infineon Technologies
302-2021026-BFS 466L6 E6327
RF TRANS 2 NPN 5V/9V 14GHZ TSLP
Infineon Technologies
302-2021027-BFR 949T E6327
RF TRANS NPN 10V 9GHZ SC75
Infineon Technologies
302-2021029-BFS 483 E6327
RF TRANS 2 NPN 12V 8GHZ SOT363-6
Infineon Technologies
302-2021046-BFS 481 E6327
RF TRANS 2 NPN 12V 8GHZ SOT363-6
Infineon Technologies
302-2021047-BFS 380L6 E6327
RF TRANS 2 NPN 9V 14GHZ TSLP-6-1
Infineon Technologies
302-2021049-BFP740E6327HTSA1
RF TRANS NPN 4.7V 42GHZ SOT343-4
Infineon Technologies
302-2021051-BFS 469L6 E6327
RF TRANS 2 NPN 5V/10V 9GHZ TSLP
Infineon Technologies
302-2021052-BFP460E6327HTSA1
RF TRANS NPN 5.8V 22GHZ SOT343-4
Infineon Technologies
302-2021055-BFR 705L3RH E6327
RF TRANS NPN 4.7V 39GHZ TSLP-3
Infineon Technologies
302-2021057-BFR750L3RHE6327XTSA1
RF TRANS NPN 4.7V 37GHZ TSLP-3
Infineon Technologies
302-2021066-BFP 740F E6327
RF TRANS NPN 4.7V 42GHZ 4TSFP
Infineon Technologies