TP65H015G5WS

650 V 95 A GAN FET
NOVA Part#:
312-2297731-TP65H015G5WS
Manufacturer:
Manufacturer Part No:
TP65H015G5WS
Standard Package:
30
Technical Datasheet:

Available download format

N-Channel 650 V 93A (Tc) 266W (Tc) Through Hole TO-247-3

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerTransphorm
RoHS 1
Operating Temperature -55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package TO-247-3
TechnologyGaNFET (Gallium Nitride)
SeriesSuperGaN™
Current - Continuous Drain (Id) @ 25°C 93A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs 18mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 4.8V @ 2mA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V
FET Feature-
Package / CaseTO-247-3
Vgs (Max)±20V
FET TypeN-Channel
Drain to Source Voltage (Vdss)650 V
Input Capacitance (Ciss) (Max) @ Vds 5218 pF @ 400 V
Power Dissipation (Max) 266W (Tc)
Other Names1707-TP65H015G5WS

In stock Please contact us

Not the price you want? Fill the forms and we'll contact you ASAP.

We found other products you might like!