IPD60R360P7ATMA1

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MOSFET N-CH 600V 9A TO252-3

NOVA Part#:

312-2263560-IPD60R360P7ATMA1

Manufacturer:

Manufacturer Part No:

IPD60R360P7ATMA1

Standard Package:

2,500

Technical Datasheet:

Available download format

N-Channel 600 V 9A (Tc) 41W (Tc) Surface Mount PG-TO252-3

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Base Product Number	IPD60R360
Technology	MOSFET (Metal Oxide)
Series	CoolMOS™ P7
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	360mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id	4V @ 140µA
Gate Charge (Qg) (Max) @ Vgs	13 nC @ 10 V
FET Feature	-
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	600 V
Input Capacitance (Ciss) (Max) @ Vds	555 pF @ 400 V
Power Dissipation (Max)	41W (Tc)
Other Names	2156-IPD60R360P7ATMA1 SP001606048 IPD60R360P7ATMA1CT IPD60R360P7ATMA1DKR IPD60R360P7ATMA1TR IFEINFIPD60R360P7ATMA1