SCT2750NYTB

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SICFET N-CH 1700V 5.9A TO268

NOVA Part#:

312-2263409-SCT2750NYTB

Manufacturer:

Manufacturer Part No:

SCT2750NYTB

Standard Package:

400

Technical Datasheet:

Available download format

N-Channel 1700 V 5.9A (Tc) 57W (Tc) Surface Mount TO-268

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Rohm Semiconductor
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-268
Base Product Number	SCT2750
Technology	SiCFET (Silicon Carbide)
Series	-
Current - Continuous Drain (Id) @ 25°C	5.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	975mOhm @ 1.7A, 18V
Vgs(th) (Max) @ Id	4V @ 630µA
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 18 V
FET Feature	-
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Vgs (Max)	+22V, -6V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	1700 V
Input Capacitance (Ciss) (Max) @ Vds	275 pF @ 800 V
Power Dissipation (Max)	57W (Tc)
Other Names	SCT2750NYTBDKR SCT2750NYTBTR SCT2750NYTBCT