IMBG120R220M1HXTMA1

SICFET N-CH 1.2KV 13A TO263
NOVA Part#:
312-2278612-IMBG120R220M1HXTMA1
Manufacturer Part No:
IMBG120R220M1HXTMA1
Standard Package:
1,000
Technical Datasheet:

Available download format

N-Channel 1200 V 13A (Tc) 83W (Tc) Surface Mount PG-TO263-7-12

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerInfineon Technologies
RoHS 1
PackagingTape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package PG-TO263-7-12
Base Product Number IMBG120
TechnologySiCFET (Silicon Carbide)
SeriesCoolSiC™
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Rds On (Max) @ Id, Vgs 294mOhm @ 4A, 18V
Vgs(th) (Max) @ Id 5.7V @ 1.6mA
Gate Charge (Qg) (Max) @ Vgs 9.4 nC @ 18 V
FET FeatureStandard
Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Vgs (Max)+18V, -15V
FET TypeN-Channel
Drain to Source Voltage (Vdss)1200 V
Input Capacitance (Ciss) (Max) @ Vds 312 pF @ 800 V
Power Dissipation (Max) 83W (Tc)
Other Names448-IMBG120R220M1HXTMA1TR
SP004463796
448-IMBG120R220M1HXTMA1CT
448-IMBG120R220M1HXTMA1DKR

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