FQD2N100TM

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MOSFET N-CH 1000V 1.6A DPAK

NOVA Part#:

312-2280525-FQD2N100TM

Manufacturer:

Manufacturer Part No:

FQD2N100TM

Standard Package:

2,500

Technical Datasheet:

Available download format

N-Channel 1000 V 1.6A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252AA

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	onsemi
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252AA
Base Product Number	FQD2N100
Technology	MOSFET (Metal Oxide)
Series	QFET®
Current - Continuous Drain (Id) @ 25°C	1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	9Ohm @ 800mA, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15.5 nC @ 10 V
FET Feature	-
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs (Max)	±30V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	1000 V
Input Capacitance (Ciss) (Max) @ Vds	520 pF @ 25 V
Power Dissipation (Max)	2.5W (Ta), 50W (Tc)
Other Names	FQD2N100TMTR FQD2N100TM-ND FQD2N100TMCT ONSONSFQD2N100TM 2156-FQD2N100TM-OS FQD2N100TMDKR