SCT2H12NYTB

SICFET N-CH 1700V 4A TO268
NOVA Part#:
312-2280533-SCT2H12NYTB
Manufacturer:
Manufacturer Part No:
SCT2H12NYTB
Standard Package:
400
Technical Datasheet:

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N-Channel 1700 V 4A (Tc) 44W (Tc) Surface Mount TO-268

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerRohm Semiconductor
RoHS 1
PackagingTape & Reel (TR)
Operating Temperature 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package TO-268
Base Product Number SCT2H12
TechnologySiCFET (Silicon Carbide)
Series-
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.1A, 18V
Vgs(th) (Max) @ Id 4V @ 410µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 18 V
FET Feature-
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Vgs (Max)+22V, -6V
FET TypeN-Channel
Drain to Source Voltage (Vdss)1700 V
Input Capacitance (Ciss) (Max) @ Vds 184 pF @ 800 V
Power Dissipation (Max) 44W (Tc)
Other NamesSCT2H12NYTBTR
SCT2H12NYTBCT
SCT2H12NYTBDKR

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