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N-Channel 1700 V 4A (Tc) 44W (Tc) Surface Mount TO-268
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Rohm Semiconductor | |
RoHS | 1 | |
Packaging | Tape & Reel (TR) | |
Operating Temperature | 175°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | TO-268 | |
Base Product Number | SCT2H12 | |
Technology | SiCFET (Silicon Carbide) | |
Series | - | |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 18V | |
Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.1A, 18V | |
Vgs(th) (Max) @ Id | 4V @ 410µA | |
Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 18 V | |
FET Feature | - | |
Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | |
Vgs (Max) | +22V, -6V | |
FET Type | N-Channel | |
Drain to Source Voltage (Vdss) | 1700 V | |
Input Capacitance (Ciss) (Max) @ Vds | 184 pF @ 800 V | |
Power Dissipation (Max) | 44W (Tc) | |
Other Names | SCT2H12NYTBTR SCT2H12NYTBCT SCT2H12NYTBDKR |
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