Altium Eagle OrCad PADS KiCad 
G2R1000MT33J
SIC MOSFET N-CH 4A TO263-7
NOVA Part#:
312-2283907-G2R1000MT33J
Manufacturer:
Manufacturer Part No:
G2R1000MT33J
Standard Package:
50
Technical Datasheet:
Available download format
Please fill in your information in the form , we will contact you and give you the cad model as soon as possible.
N-Channel 3300 V 4A (Tc) 74W (Tc) Surface Mount TO-263-7
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | GeneSiC Semiconductor | |
| RoHS | 1 | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | TO-263-7 | |
| Base Product Number | G2R1000 | |
| Technology | SiCFET (Silicon Carbide) | |
| Series | G2R™ | |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 20V | |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2A, 20V | |
| Vgs(th) (Max) @ Id | 3.5V @ 2mA | |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 20 V | |
| FET Feature | - | |
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | |
| Vgs (Max) | +20V, -5V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 3300 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 238 pF @ 1000 V | |
| Power Dissipation (Max) | 74W (Tc) | |
| Other Names | 1242-G2R1000MT33J |
In stock Please contact us
Not the price you want? Fill the forms and we'll contact you ASAP.
We found other products you might like!
GAP3SLT33-214GeneSiC Semiconductor
STE07DE220STMicroelectronics
IXTA1N200P3HVIXYS
G2R1000MT17JGeneSiC Semiconductor
IMBF170R650M1XTMA1Infineon Technologies- GB05MPS33-263GeneSiC Semiconductor
SCT2H12NYTBRohm Semiconductor- G2R120MT33JGeneSiC Semiconductor
BSP324H6327XTSA1Infineon Technologies
G2R1000MT17DGeneSiC Semiconductor
C2M1000170JWolfspeed, Inc.
G2R50MT33KGeneSiC Semiconductor
