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IPD80R1K4P7ATMA1
MOSFET N-CH 800V 4A TO252
NOVA Part#:
312-2287845-IPD80R1K4P7ATMA1
Manufacturer:
Manufacturer Part No:
IPD80R1K4P7ATMA1
Standard Package:
2,500
Technical Datasheet:
Available download format
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N-Channel 800 V 4A (Tc) 32W (Tc) Surface Mount PG-TO252-2
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO252-2 | |
| Base Product Number | IPD80R1 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | CoolMOS™ | |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 1.4A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 700µA | |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V | |
| FET Feature | Super Junction | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Vgs (Max) | ±20V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 800 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 500 V | |
| Power Dissipation (Max) | 32W (Tc) | |
| Other Names | INFINFIPD80R1K4P7ATMA1 IPD80R1K4P7ATMA1DKR IPD80R1K4P7ATMA1TR IPD80R1K4P7ATMA1CT SP001422564 2156-IPD80R1K4P7ATMA1 |
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