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N-Channel 650 V 47.2A (Tc) 187W (Tc) Through Hole TO-247-3
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Transphorm | |
RoHS | 1 | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-247-3 | |
Technology | GaNFET (Gallium Nitride) | |
Series | * | |
Current - Continuous Drain (Id) @ 25°C | 47.2A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 41mOhm @ 30A, 10V | |
Vgs(th) (Max) @ Id | 4.8V @ 1mA | |
Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V | |
FET Feature | - | |
Package / Case | TO-247-3 | |
Vgs (Max) | ±20V | |
FET Type | N-Channel | |
Drain to Source Voltage (Vdss) | 650 V | |
Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 400 V | |
Power Dissipation (Max) | 187W (Tc) | |
Other Names | 1707-TP65H035G4WSQA |
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