TP65H035G4WSQA

650 V 46.5 GAN FET
NOVA Part#:
312-2299701-TP65H035G4WSQA
Manufacturer:
Manufacturer Part No:
TP65H035G4WSQA
Standard Package:
30
Technical Datasheet:

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N-Channel 650 V 47.2A (Tc) 187W (Tc) Through Hole TO-247-3

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerTransphorm
RoHS 1
Operating Temperature -55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package TO-247-3
TechnologyGaNFET (Gallium Nitride)
Series*
Current - Continuous Drain (Id) @ 25°C 47.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs 41mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
FET Feature-
Package / CaseTO-247-3
Vgs (Max)±20V
FET TypeN-Channel
Drain to Source Voltage (Vdss)650 V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 400 V
Power Dissipation (Max) 187W (Tc)
Other Names1707-TP65H035G4WSQA

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