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N-Channel 1200 V 42A (Tc) 224W (Tc) Surface Mount TO-263-7
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | GeneSiC Semiconductor | |
RoHS | 1 | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | TO-263-7 | |
Base Product Number | G3R75 | |
Technology | SiCFET (Silicon Carbide) | |
Series | G3R™ | |
Current - Continuous Drain (Id) @ 25°C | 42A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 15V | |
Rds On (Max) @ Id, Vgs | 90mOhm @ 20A, 15V | |
Vgs(th) (Max) @ Id | 2.69V @ 7.5mA | |
Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 15 V | |
FET Feature | - | |
Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | |
Vgs (Max) | ±15V | |
FET Type | N-Channel | |
Drain to Source Voltage (Vdss) | 1200 V | |
Input Capacitance (Ciss) (Max) @ Vds | 1560 pF @ 800 V | |
Power Dissipation (Max) | 224W (Tc) | |
Other Names | 1242-G3R75MT12J |
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