IPD80R2K0P7ATMA1

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MOSFET N-CH 800V 3A TO252-3

NOVA Part#:

312-2291130-IPD80R2K0P7ATMA1

Manufacturer:

Manufacturer Part No:

IPD80R2K0P7ATMA1

Standard Package:

2,500

Technical Datasheet:

Available download format

N-Channel 800 V 3A (Tc) 24W (Tc) Surface Mount PG-TO252-3

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Base Product Number	IPD80R2
Technology	MOSFET (Metal Oxide)
Series	CoolMOS™ P7
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2Ohm @ 940mA, 10V
Vgs(th) (Max) @ Id	3.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	9 nC @ 10 V
FET Feature	-
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	800 V
Input Capacitance (Ciss) (Max) @ Vds	175 pF @ 500 V
Power Dissipation (Max)	24W (Tc)
Other Names	2156-IPD80R2K0P7ATMA1 INFINFIPD80R2K0P7ATMA1 IPD80R2K0P7ATMA1DKR IPD80R2K0P7ATMA1CT SP001634906 IPD80R2K0P7ATMA1TR