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N-Channel 150 V 900mA (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6)
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
RoHS | 1 | |
Packaging | Tape & Reel (TR) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | Micro6™(TSOP-6) | |
Base Product Number | IRF5802 | |
Technology | MOSFET (Metal Oxide) | |
Series | HEXFET® | |
Current - Continuous Drain (Id) @ 25°C | 900mA (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 1.2Ohm @ 540mA, 10V | |
Vgs(th) (Max) @ Id | 5.5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 6.8 nC @ 10 V | |
FET Feature | - | |
Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
Vgs (Max) | ±30V | |
FET Type | N-Channel | |
Drain to Source Voltage (Vdss) | 150 V | |
Input Capacitance (Ciss) (Max) @ Vds | 88 pF @ 25 V | |
Power Dissipation (Max) | 2W (Ta) | |
Other Names | IRF5802TRPBFTR IRF5802TRPBF-ND IRF5802TRPBFCT SP001561828 IRF5802TRPBFDKR |
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