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SI3442BDV-T1-E3
MOSFET N-CH 20V 3A 6TSOP
NOVA Part#:
312-2285274-SI3442BDV-T1-E3
Manufacturer:
Manufacturer Part No:
SI3442BDV-T1-E3
Standard Package:
3,000
Technical Datasheet:
Available download format
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N-Channel 20 V 3A (Ta) 860mW (Ta) Surface Mount 6-TSOP
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 6-TSOP | |
| Base Product Number | SI3442 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | TrenchFET® | |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 57mOhm @ 4A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 4.5 V | |
| FET Feature | - | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Vgs (Max) | ±12V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 20 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 295 pF @ 10 V | |
| Power Dissipation (Max) | 860mW (Ta) | |
| Other Names | SI3442BDV-T1-E3TR SI3442BDV-T1-E3DKR SI3442BDV-T1-E3CT SI3442BDVT1E3 |
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