IRF5801TRPBF

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MOSFET N-CH 200V 600MA MICRO6

NOVA Part#:

312-2290096-IRF5801TRPBF

Manufacturer:

Manufacturer Part No:

IRF5801TRPBF

Standard Package:

3,000

Technical Datasheet:

Available download format

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N-Channel 200 V 600mA (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6)

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	Micro6™(TSOP-6)
Base Product Number	IRF5801
Technology	MOSFET (Metal Oxide)
Series	HEXFET®
Current - Continuous Drain (Id) @ 25°C	600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.2Ohm @ 360mA, 10V
Vgs(th) (Max) @ Id	5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	3.9 nC @ 10 V
FET Feature	-
Package / Case	SOT-23-6 Thin, TSOT-23-6
Vgs (Max)	±30V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	200 V
Input Capacitance (Ciss) (Max) @ Vds	88 pF @ 25 V
Power Dissipation (Max)	2W (Ta)
Other Names	IRF5801TRPBFTR IRF5801TRPBFDKR IRF5801TRPBFCT IRF5801TRPBF-ND SP001570104