IPB020N10N5ATMA1

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MOSFET N-CH 100V 120A D2PAK

NOVA Part#:

312-2283572-IPB020N10N5ATMA1

Manufacturer:

Manufacturer Part No:

IPB020N10N5ATMA1

Standard Package:

1,000

Technical Datasheet:

Available download format

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N-Channel 100 V 120A (Tc) 375W (Tc) Surface Mount PG-TO263-3

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3
Base Product Number	IPB020
Technology	MOSFET (Metal Oxide)
Series	OptiMOS™
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	3.8V @ 270µA
Gate Charge (Qg) (Max) @ Vgs	210 nC @ 10 V
FET Feature	-
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	15600 pF @ 50 V
Power Dissipation (Max)	375W (Tc)
Other Names	IPB020N10N5ATMA1CT IPB020N10N5ATMA1DKR SP001132558 IPB020N10N5ATMA1TR