IPB027N10N3GATMA1

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MOSFET N-CH 100V 120A D2PAK

NOVA Part#:

312-2283550-IPB027N10N3GATMA1

Manufacturer:

Manufacturer Part No:

IPB027N10N3GATMA1

Standard Package:

1,000

Technical Datasheet:

Available download format

N-Channel 100 V 120A (Tc) 300W (Tc) Surface Mount PG-TO263-3

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3
Base Product Number	IPB027
Technology	MOSFET (Metal Oxide)
Series	OptiMOS™
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	2.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	3.5V @ 275µA
Gate Charge (Qg) (Max) @ Vgs	206 nC @ 10 V
FET Feature	-
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	14800 pF @ 50 V
Power Dissipation (Max)	300W (Tc)
Other Names	IPB027N10N3 GCT IPB027N10N3GATMA1CT IPB027N10N3 G-ND IPB027N10N3 GDKR-ND SP000506508 IPB027N10N3GATMA1DKR IPB027N10N3G IPB027N10N3GATMA1TR IPB027N10N3 G IPB027N10N3 GTR-ND IPB027N10N3 GDKR IPB027N10N3 GCT-ND