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XK1R9F10QB,LXGQ
MOSFET N-CH 100V 160A TO220SM
NOVA Part#:
312-2297576-XK1R9F10QB,LXGQ
Manufacturer:
Manufacturer Part No:
XK1R9F10QB,LXGQ
Standard Package:
1,000
Technical Datasheet:
Available download format
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N-Channel 100 V 160A (Ta) 375W (Tc) Surface Mount TO-220SM(W)
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Toshiba Semiconductor and Storage | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | 175°C | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | TO-220SM(W) | |
| Base Product Number | XK1R9F10 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | U-MOSX-H | |
| Current - Continuous Drain (Id) @ 25°C | 160A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
| Rds On (Max) @ Id, Vgs | 1.92mOhm @ 80A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 184 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Vgs (Max) | ±20V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 11500 pF @ 10 V | |
| Power Dissipation (Max) | 375W (Tc) | |
| Other Names | 264-XK1R9F10QBLXGQTR 264-XK1R9F10QBLXGQCT 264-XK1R9F10QBLXGQDKR XK1R9F10QB,LXGQ(O |
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