SI2302DDS-T1-GE3

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MOSFET N-CH 20V 2.9A SOT23-3

NOVA Part#:

312-2285034-SI2302DDS-T1-GE3

Manufacturer:

Manufacturer Part No:

SI2302DDS-T1-GE3

Standard Package:

3,000

Technical Datasheet:

Available download format

N-Channel 20 V 2.9A (Tj) 710mW (Ta) Surface Mount SOT-23-3 (TO-236)

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Base Product Number	SI2302
Technology	MOSFET (Metal Oxide)
Series	TrenchFET®
Current - Continuous Drain (Id) @ 25°C	2.9A (Tj)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	57mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id	850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	5.5 nC @ 4.5 V
FET Feature	-
Package / Case	TO-236-3, SC-59, SOT-23-3
Vgs (Max)	±8V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	710mW (Ta)
Other Names	SI2302DDS-T1-GE3CT SI2302DDS-T1-GE3DKR SI2302DDS-T1-GE3TR