SI2312BDS-T1-E3

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MOSFET N-CH 20V 3.9A SOT23-3

NOVA Part#:

312-2280364-SI2312BDS-T1-E3

Manufacturer:

Manufacturer Part No:

SI2312BDS-T1-E3

Standard Package:

3,000

Technical Datasheet:

Available download format

N-Channel 20 V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Base Product Number	SI2312
Technology	MOSFET (Metal Oxide)
Series	TrenchFET®
Current - Continuous Drain (Id) @ 25°C	3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	31mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id	850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 4.5 V
FET Feature	-
Package / Case	TO-236-3, SC-59, SOT-23-3
Vgs (Max)	±8V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	750mW (Ta)
Other Names	SI2312BDS-T1-E3CT SI2312BDS-T1-E3DKR SI2312BDS-T1-E3TR SI2312BDST1E3