SQ2310ES-T1

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SQ2310ES-T1_GE3

MOSFET N-CH 20V 6A TO236

NOVA Part#:

312-2264191-SQ2310ES-T1_GE3

Manufacturer:

Manufacturer Part No:

SQ2310ES-T1_GE3

Standard Package:

3,000

Technical Datasheet:

Available download format

N-Channel 20 V 6A (Tc) 2W (Tc) Surface Mount SOT-23-3 (TO-236)

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Base Product Number	SQ2310
Technology	MOSFET (Metal Oxide)
Series	TrenchFET®
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	30mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.5 nC @ 4.5 V
FET Feature	-
Package / Case	TO-236-3, SC-59, SOT-23-3
Vgs (Max)	±8V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	20 V
Input Capacitance (Ciss) (Max) @ Vds	485 pF @ 10 V
Power Dissipation (Max)	2W (Tc)
Other Names	SQ2310ES-T1-GE3DKR SQ2310ES-T1-GE3DKR-ND SQ2310ES-T1-GE3 SQ2310ES-T1_GE3TR SQ2310ES-T1_GE3DKR SQ2310ES-T1-GE3TR SQ2310ES-T1-GE3TR-ND SQ2310ES-T1-GE3CT SQ2310ES-T1_GE3CT SQ2310ES-T1-GE3CT-ND