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P-Channel 60 V 9.4A (Tc) 2.5W (Ta), 38W (Tc) Through Hole I-PAK
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | onsemi | |
RoHS | 1 | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | I-PAK | |
Base Product Number | FQU11P06 | |
Technology | MOSFET (Metal Oxide) | |
Series | QFET® | |
Current - Continuous Drain (Id) @ 25°C | 9.4A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 185mOhm @ 4.7A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V | |
FET Feature | - | |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
Vgs (Max) | ±30V | |
FET Type | P-Channel | |
Drain to Source Voltage (Vdss) | 60 V | |
Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 25 V | |
Power Dissipation (Max) | 2.5W (Ta), 38W (Tc) |
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