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N-Channel 60 V 200mA (Tc) 400mW (Ta) Through Hole TO-92-3
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | onsemi | |
RoHS | 1 | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-92-3 | |
Base Product Number | 2N7000 | |
Technology | MOSFET (Metal Oxide) | |
Series | - | |
Current - Continuous Drain (Id) @ 25°C | 200mA (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 5Ohm @ 500mA, 10V | |
Vgs(th) (Max) @ Id | 3V @ 1mA | |
FET Feature | - | |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
Vgs (Max) | ±20V | |
FET Type | N-Channel | |
Drain to Source Voltage (Vdss) | 60 V | |
Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 25 V | |
Power Dissipation (Max) | 400mW (Ta) | |
Other Names | 2N7000TATB 2N7000TATR 2N7000TACT 2N7000TA_T 2N7000TA-ND 2N7000TATR-ND |
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