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N-Channel 60 V 500mA (Ta) 830mW (Ta) Through Hole TO-92-3
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | onsemi | |
RoHS | 1 | |
Packaging | Tape & Reel (TR) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-92-3 | |
Base Product Number | BS170 | |
Technology | MOSFET (Metal Oxide) | |
Series | - | |
Current - Continuous Drain (Id) @ 25°C | 500mA (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 5Ohm @ 200mA, 10V | |
Vgs(th) (Max) @ Id | 3V @ 1mA | |
FET Feature | - | |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
Vgs (Max) | ±20V | |
FET Type | N-Channel | |
Drain to Source Voltage (Vdss) | 60 V | |
Input Capacitance (Ciss) (Max) @ Vds | 40 pF @ 10 V | |
Power Dissipation (Max) | 830mW (Ta) | |
Other Names | BS170_D27Z BS170_D27ZDKRINACTIVE BS170_D27ZDKR-ND BS170-D27ZTR BS170_D27ZCT BS170_D27ZDKR BS170-D27ZDKRINACTIVE BS170_D27Z-ND BS170_D27ZTR BS170_D27ZDKRINACTIVE-ND BS170-D27ZCT BS170_D27ZTR-ND BS170_D27ZCT-ND |
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