G2R50MT33K

3300V 50M TO-247-4 SIC MOSFET
NOVA Part#:
312-2283971-G2R50MT33K
Manufacturer Part No:
G2R50MT33K
Standard Package:
30
Technical Datasheet:

Available download format

N-Channel 3300 V 63A (Tc) 536W (Tc) Through Hole TO-247-4

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerGeneSiC Semiconductor
RoHS 1
Operating Temperature -55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package TO-247-4
TechnologySiCFET (Silicon Carbide)
SeriesG2R™
Current - Continuous Drain (Id) @ 25°C 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs 50mOhm @ 40A, 20V
Vgs(th) (Max) @ Id 3.5V @ 10mA (Typ)
Gate Charge (Qg) (Max) @ Vgs 340 nC @ 20 V
FET FeatureStandard
Package / CaseTO-247-4
Vgs (Max)+25V, -10V
FET TypeN-Channel
Drain to Source Voltage (Vdss)3300 V
Input Capacitance (Ciss) (Max) @ Vds 7301 pF @ 1000 V
Power Dissipation (Max) 536W (Tc)
Other Names1242-G2R50MT33K

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