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N-Channel 3300 V 63A (Tc) 536W (Tc) Through Hole TO-247-4
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | GeneSiC Semiconductor | |
RoHS | 1 | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-247-4 | |
Technology | SiCFET (Silicon Carbide) | |
Series | G2R™ | |
Current - Continuous Drain (Id) @ 25°C | 63A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 20V | |
Rds On (Max) @ Id, Vgs | 50mOhm @ 40A, 20V | |
Vgs(th) (Max) @ Id | 3.5V @ 10mA (Typ) | |
Gate Charge (Qg) (Max) @ Vgs | 340 nC @ 20 V | |
FET Feature | Standard | |
Package / Case | TO-247-4 | |
Vgs (Max) | +25V, -10V | |
FET Type | N-Channel | |
Drain to Source Voltage (Vdss) | 3300 V | |
Input Capacitance (Ciss) (Max) @ Vds | 7301 pF @ 1000 V | |
Power Dissipation (Max) | 536W (Tc) | |
Other Names | 1242-G2R50MT33K |
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