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N-Channel 650 V 119A (Tc) 565W (Tc) Through Hole HiP247™ Long Leads
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | STMicroelectronics | |
RoHS | 1 | |
Operating Temperature | -55°C ~ 200°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | HiP247™ Long Leads | |
Base Product Number | SCTWA90 | |
Technology | SiCFET (Silicon Carbide) | |
Series | - | |
Current - Continuous Drain (Id) @ 25°C | 119A (Tc) | |
Rds On (Max) @ Id, Vgs | 24mOhm @ 50A, 18V | |
Vgs(th) (Max) @ Id | 5V @ 1mA | |
Gate Charge (Qg) (Max) @ Vgs | 157 nC @ 18 V | |
FET Feature | - | |
Package / Case | TO-247-3 | |
Vgs (Max) | +22V, -10V | |
FET Type | N-Channel | |
Drain to Source Voltage (Vdss) | 650 V | |
Input Capacitance (Ciss) (Max) @ Vds | 3380 pF @ 400 V | |
Power Dissipation (Max) | 565W (Tc) | |
Other Names | 497-SCTWA90N65G2V-4 |
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