C3M0015065D

SICFET N-CH 650V 120A TO247-3
NOVA Part#:
312-2265050-C3M0015065D
Manufacturer:
Manufacturer Part No:
C3M0015065D
Standard Package:
30
Technical Datasheet:

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N-Channel 650 V 120A (Tc) 416W (Tc) Through Hole TO-247-3

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerWolfspeed, Inc.
RoHS 1
Operating Temperature -40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package TO-247-3
Base Product Number C3M0015065
TechnologySiCFET (Silicon Carbide)
SeriesC3M™
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V
Rds On (Max) @ Id, Vgs 21mOhm @ 55.8A, 15V
Vgs(th) (Max) @ Id 3.6V @ 15.5mA
Gate Charge (Qg) (Max) @ Vgs 188 nC @ 15 V
FET Feature-
Package / CaseTO-247-3
Vgs (Max)+15V, -4V
FET TypeN-Channel
Drain to Source Voltage (Vdss)650 V
Input Capacitance (Ciss) (Max) @ Vds 5011 pF @ 400 V
Power Dissipation (Max) 416W (Tc)
Other Names1697-C3M0015065D
-3312-C3M0015065D

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