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SCTW100N65G2AG
SICFET N-CH 650V 100A HIP247
NOVA Part#:
312-2283943-SCTW100N65G2AG
Manufacturer:
Manufacturer Part No:
SCTW100N65G2AG
Standard Package:
30
Technical Datasheet:
Available download format
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N-Channel 650 V 100A (Tc) 420W (Tc) Through Hole HiP247™
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | STMicroelectronics | |
| RoHS | 1 | |
| Operating Temperature | -55°C ~ 200°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | HiP247™ | |
| Base Product Number | SCTW100 | |
| Technology | SiCFET (Silicon Carbide) | |
| Series | Automotive, AEC-Q101 | |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 18V | |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 50A, 18V | |
| Vgs(th) (Max) @ Id | 5V @ 5mA | |
| Gate Charge (Qg) (Max) @ Vgs | 162 nC @ 18 V | |
| FET Feature | - | |
| Package / Case | TO-247-3 | |
| Vgs (Max) | +22V, -10V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 3315 pF @ 520 V | |
| Power Dissipation (Max) | 420W (Tc) | |
| Other Names | 497-SCTW100N65G2AG |
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