SISH892BDN-T1-GE3

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N-CHANNEL 100 V (D-S) MOSFET POW

NOVA Part#:

312-2297021-SISH892BDN-T1-GE3

Manufacturer:

Manufacturer Part No:

SISH892BDN-T1-GE3

Standard Package:

3,000

Available download format

N-Channel 100 V 6.8A (Ta), 20A (Tc) 3.4W (Ta), 29W (Tc) Surface Mount PowerPAK® SO-8DC

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8DC
Technology	MOSFET (Metal Oxide)
Series	TrenchFET® Gen IV
Current - Continuous Drain (Id) @ 25°C	6.8A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	30.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	26.5 nC @ 10 V
FET Feature	-
Package / Case	PowerPAK® SO-8
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	1110 pF @ 50 V
Power Dissipation (Max)	3.4W (Ta), 29W (Tc)
Other Names	742-SISH892BDN-T1-GE3DKR 742-SISH892BDN-T1-GE3TR 742-SISH892BDN-T1-GE3CT