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SIS892ADN-T1-GE3
MOSFET N-CH 100V 28A PPAK1212-8
NOVA Part#:
312-2275027-SIS892ADN-T1-GE3
Manufacturer:
Manufacturer Part No:
SIS892ADN-T1-GE3
Standard Package:
3,000
Technical Datasheet:
Available download format
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N-Channel 100 V 28A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PowerPAK® 1212-8 | |
| Base Product Number | SIS892 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | TrenchFET® | |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 10A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 19.5 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | PowerPAK® 1212-8 | |
| Vgs (Max) | ±20V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 50 V | |
| Power Dissipation (Max) | 3.7W (Ta), 52W (Tc) | |
| Other Names | SIS892ADN-T1-GE3TR SIS892ADNT1GE3 SIS892ADN-T1-GE3CT SIS892ADN-T1-GE3DKR |
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