SI7852DP-T1-E3

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MOSFET N-CH 80V 7.6A PPAK SO-8

NOVA Part#:

312-2281833-SI7852DP-T1-E3

Manufacturer:

Manufacturer Part No:

SI7852DP-T1-E3

Standard Package:

3,000

Technical Datasheet:

Available download format

N-Channel 80 V 7.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Base Product Number	SI7852
Technology	MOSFET (Metal Oxide)
Series	TrenchFET®
Current - Continuous Drain (Id) @ 25°C	7.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	16.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs	41 nC @ 10 V
FET Feature	-
Package / Case	PowerPAK® SO-8
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	80 V
Power Dissipation (Max)	1.9W (Ta)
Other Names	SI7852DP-T1-E3-ND SI7852DP-T1-E3TR SI7852DPT1E3 SI7852DP-T1-E3CT SI7852DP-T1-E3DKR