SI2325DS-T1-E3

MOSFET P-CH 150V 530MA SOT23-3
NOVA Part#:
312-2294538-SI2325DS-T1-E3
Manufacturer:
Manufacturer Part No:
SI2325DS-T1-E3
Standard Package:
3,000
Technical Datasheet:

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P-Channel 150 V 530mA (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerVishay Siliconix
RoHS 1
PackagingTape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package SOT-23-3 (TO-236)
Base Product Number SI2325
TechnologyMOSFET (Metal Oxide)
SeriesTrenchFET®
Current - Continuous Drain (Id) @ 25°C 530mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
FET Feature-
Package / CaseTO-236-3, SC-59, SOT-23-3
Vgs (Max)±20V
FET TypeP-Channel
Drain to Source Voltage (Vdss)150 V
Input Capacitance (Ciss) (Max) @ Vds 510 pF @ 25 V
Power Dissipation (Max) 750mW (Ta)
Other NamesSI2325DST1E3
SI2325DS-T1-E3TR
SI2325DS-T1-E3CT
SI2325DS-T1-E3DKR

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