SIDR638DP-T1-GE3

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MOSFET N-CH 40V 100A PPAK SO-8DC

NOVA Part#:

312-2288481-SIDR638DP-T1-GE3

Manufacturer:

Manufacturer Part No:

SIDR638DP-T1-GE3

Standard Package:

3,000

Technical Datasheet:

Available download format

N-Channel 40 V 100A (Tc) 125W (Tc) Surface Mount PowerPAK® SO-8DC

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8DC
Base Product Number	SIDR638
Technology	MOSFET (Metal Oxide)
Series	TrenchFET® Gen IV
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	0.88mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	204 nC @ 10 V
FET Feature	-
Package / Case	PowerPAK® SO-8
Vgs (Max)	+20V, -16V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	40 V
Input Capacitance (Ciss) (Max) @ Vds	10500 pF @ 20 V
Power Dissipation (Max)	125W (Tc)
Other Names	SIDR638DP-T1-GE3CT SIDR638DP-T1-GE3TR SIDR638DP-T1-GE3DKR