SIRA50DP-T1-RE3

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MOSFET N-CH 40V 62.5A/100A PPAK

NOVA Part#:

312-2288132-SIRA50DP-T1-RE3

Manufacturer:

Manufacturer Part No:

SIRA50DP-T1-RE3

Standard Package:

3,000

Technical Datasheet:

Available download format

N-Channel 40 V 62.5A (Ta), 100A (Tc) 6.25W (Ta), 100W (Tc) Surface Mount PowerPAK® SO-8

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Base Product Number	SIRA50
Technology	MOSFET (Metal Oxide)
Series	TrenchFET® Gen IV
Current - Continuous Drain (Id) @ 25°C	62.5A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	194 nC @ 10 V
FET Feature	-
Package / Case	PowerPAK® SO-8
Vgs (Max)	+20V, -16V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	40 V
Input Capacitance (Ciss) (Max) @ Vds	8445 pF @ 20 V
Power Dissipation (Max)	6.25W (Ta), 100W (Tc)
Other Names	SIRA50DP-T1-RE3TR SIRA50DP-T1-RE3DKR SIRA50DP-T1-RE3CT