SI3407DV-T1-GE3

MOSFET P-CH 20V 8A 6TSOP
NOVA Part#:
312-2284523-SI3407DV-T1-GE3
Manufacturer:
Manufacturer Part No:
SI3407DV-T1-GE3
Standard Package:
3,000
Technical Datasheet:

Available download format

P-Channel 20 V 8A (Tc) 4.2W (Tc) Surface Mount 6-TSOP

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerVishay Siliconix
RoHS 1
PackagingTape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package 6-TSOP
Base Product Number SI3407
TechnologyMOSFET (Metal Oxide)
SeriesTrenchFET®
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs 24mOhm @ 7.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V
FET Feature-
Package / CaseSOT-23-6 Thin, TSOT-23-6
Vgs (Max)±12V
FET TypeP-Channel
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds 1670 pF @ 10 V
Power Dissipation (Max) 4.2W (Tc)
Other NamesSI3407DV-T1-GE3CT
SI3407DV-T1-GE3DKR
SI3407DV-T1-GE3TR
SI3407DV-T1-GE3-ND

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