SI3483DDV-T1-GE3

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MOSFET P-CH 30V 6.4A/8A 6TSOP

NOVA Part#:

312-2285070-SI3483DDV-T1-GE3

Manufacturer:

Manufacturer Part No:

SI3483DDV-T1-GE3

Standard Package:

3,000

Technical Datasheet:

Available download format

P-Channel 30 V 6.4A (Ta), 8A (Tc) 2W (Ta), 3W (Tc) Surface Mount 6-TSOP

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Base Product Number	SI3483
Technology	MOSFET (Metal Oxide)
Series	TrenchFET® Gen IV
Current - Continuous Drain (Id) @ 25°C	6.4A (Ta), 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	31.2mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	14.5 nC @ 10 V
FET Feature	-
Package / Case	SOT-23-6 Thin, TSOT-23-6
Vgs (Max)	+16V, -20V
FET Type	P-Channel
Drain to Source Voltage (Vdss)	30 V
Input Capacitance (Ciss) (Max) @ Vds	580 pF @ 15 V
Power Dissipation (Max)	2W (Ta), 3W (Tc)
Other Names	SI3483DDV-T1-GE3DKR SI3483DDV-T1-GE3TR SI3483DDV-T1-GE3CT