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N-Channel 100 V 35A (Tc) 71W (Tc) Surface Mount PG-TO252-3-11
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
RoHS | 1 | |
Packaging | Tape & Reel (TR) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | PG-TO252-3-11 | |
Base Product Number | IPD35N10 | |
Technology | MOSFET (Metal Oxide) | |
Series | OptiMOS™ | |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 24mOhm @ 35A, 10V | |
Vgs(th) (Max) @ Id | 2.4V @ 39µA | |
Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V | |
FET Feature | - | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Vgs (Max) | ±20V | |
FET Type | N-Channel | |
Drain to Source Voltage (Vdss) | 100 V | |
Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 25 V | |
Power Dissipation (Max) | 71W (Tc) | |
Other Names | IPD35N10S3L26ATMA1CT IPD35N10S3L-26-ND IPD35N10S3L-26 SP000386184 IPD35N10S3L26ATMA1DKR INFINFIPD35N10S3L26ATMA1 IPD35N10S3L26ATMA1TR 2156-IPD35N10S3L26ATMA1 |
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