IPD30N10S3L34ATMA1

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MOSFET N-CH 100V 30A TO252-3

NOVA Part#:

312-2280899-IPD30N10S3L34ATMA1

Manufacturer:

Manufacturer Part No:

IPD30N10S3L34ATMA1

Standard Package:

2,500

Technical Datasheet:

Available download format

N-Channel 100 V 30A (Tc) 57W (Tc) Surface Mount PG-TO252-3-11

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3-11
Base Product Number	IPD30N10
Technology	MOSFET (Metal Oxide)
Series	OptiMOS™
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	31mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2.4V @ 29µA
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 10 V
FET Feature	-
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	1976 pF @ 25 V
Power Dissipation (Max)	57W (Tc)
Other Names	IPD30N10S3L-34TR IPD30N10S3L-34DKR IPD30N10S3L34ATMA1DKR IPD30N10S3L-34CT-ND IPD30N10S3L34 SP000261248 IPD30N10S3L-34DKR-ND IPD30N10S3L34ATMA1CT IPD30N10S3L-34 IPD30N10S3L-34TR-ND IPD30N10S3L-34CT IPD30N10S3L-34-ND IPD30N10S3L34ATMA1TR