IPB100N12S305ATMA1

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MOSFET N-CH 120V 100A TO263-3

NOVA Part#:

312-2289073-IPB100N12S305ATMA1

Manufacturer:

Manufacturer Part No:

IPB100N12S305ATMA1

Standard Package:

1,000

Technical Datasheet:

Available download format

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N-Channel 120 V 100A (Tc) 300W (Tc) Surface Mount PG-TO263-3-1

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3-1
Base Product Number	IPB100
Technology	MOSFET (Metal Oxide)
Series	OptiMOS™
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	5.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 240µA
Gate Charge (Qg) (Max) @ Vgs	185 nC @ 10 V
FET Feature	-
Package / Case	TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	120 V
Input Capacitance (Ciss) (Max) @ Vds	11570 pF @ 25 V
Power Dissipation (Max)	300W (Tc)
Other Names	IPB100N12S305ATMA1CT IPB100N12S305ATMA1TR IPB100N12S305ATMA1DKR SP001399682