IPB036N12N3GATMA1

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MOSFET N-CH 120V 180A TO263-7

NOVA Part#:

312-2283570-IPB036N12N3GATMA1

Manufacturer:

Manufacturer Part No:

IPB036N12N3GATMA1

Standard Package:

1,000

Technical Datasheet:

Available download format

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N-Channel 120 V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-7
Base Product Number	IPB036
Technology	MOSFET (Metal Oxide)
Series	OptiMOS™
Current - Continuous Drain (Id) @ 25°C	180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs	211 nC @ 10 V
FET Feature	-
Package / Case	TO-263-7, D²Pak (6 Leads + Tab)
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	120 V
Input Capacitance (Ciss) (Max) @ Vds	13800 pF @ 60 V
Power Dissipation (Max)	300W (Tc)
Other Names	IPB036N12N3 GDKR-ND SP000675204 IPB036N12N3 G IPB036N12N3 GTR IPB036N12N3 GTR-ND IPB036N12N3 G-ND IPB036N12N3 GCT IPB036N12N3GATMA1DKR IPB036N12N3 GCT-ND IPB036N12N3GATMA1CT IPB036N12N3GATMA1TR IPB036N12N3 GDKR IPB036N12N3G