SIS890DN-T1-GE3

JavaScript seems to be disabled in your browser. For the best experience on our site, be sure to turn on Javascript in your browser.

MOSFET N-CH 100V 30A PPAK1212-8

NOVA Part#:

312-2287917-SIS890DN-T1-GE3

Manufacturer:

Manufacturer Part No:

SIS890DN-T1-GE3

Standard Package:

3,000

Technical Datasheet:

Available download format

N-Channel 100 V 30A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Base Product Number	SIS890
Technology	MOSFET (Metal Oxide)
Series	TrenchFET®
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	23.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 10 V
FET Feature	-
Package / Case	PowerPAK® 1212-8
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	802 pF @ 50 V
Power Dissipation (Max)	3.7W (Ta), 52W (Tc)
Other Names	SIS890DN-T1-GE3DKR SIS890DN-T1-GE3TR SIS890DNT1GE3 SIS890DN-T1-GE3CT