TPD3215M

GANFET 2N-CH 600V 70A MODULE
NOVA Part#:
303-2250719-TPD3215M
Manufacturer:
Manufacturer Part No:
TPD3215M
Standard Package:
1
Technical Datasheet:

Available download format

Mosfet Array 2 N-Channel (Half Bridge) 600V 70A (Tc) 470W Through Hole Module

More Information
CategoryTransistors - FETs, MOSFETs - Arrays
ManufacturerTransphorm
RoHS 1
Operating Temperature -40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package Module
Package / CaseModule
Series-
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Rds On (Max) @ Id, Vgs 34mOhm @ 30A, 8V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 28nC @ 8V
FET FeatureGaNFET (Gallium Nitride)
FET Type2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss)600V
Input Capacitance (Ciss) (Max) @ Vds 2260pF @ 100V
Power - Max 470W
Other NamesTPH3215M
TPH3215M-ND

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