SI5515CDC-T1-GE3

MOSFET N/P-CH 20V 4A 1206-8
NOVA Part#:
303-2249251-SI5515CDC-T1-GE3
Manufacturer:
Manufacturer Part No:
SI5515CDC-T1-GE3
Standard Package:
3,000
Technical Datasheet:

Available download format

Mosfet Array N and P-Channel 20V 4A 3.1W Surface Mount 1206-8 ChipFET™

More Information
CategoryTransistors - FETs, MOSFETs - Arrays
ManufacturerVishay Siliconix
RoHS 1
PackagingTape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package 1206-8 ChipFET™
Base Product Number SI5515
Package / Case8-SMD, Flat Lead
SeriesTrenchFET®
Current - Continuous Drain (Id) @ 25°C 4A
Rds On (Max) @ Id, Vgs 36mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.3nC @ 5V
FET FeatureLogic Level Gate
FET TypeN and P-Channel
Drain to Source Voltage (Vdss)20V
Input Capacitance (Ciss) (Max) @ Vds 632pF @ 10V
Power - Max 3.1W
Other NamesSI5515CDCT1GE3
SI5515CDC-T1-GE3DKR
SI5515CDC-T1-GE3TR
SI5515CDC-T1-GE3CT

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