SI5902BDC-T1-GE3

MOSFET 2N-CH 30V 4A 1206-8
NOVA Part#:
303-2247550-SI5902BDC-T1-GE3
Manufacturer:
Manufacturer Part No:
SI5902BDC-T1-GE3
Standard Package:
3,000
Technical Datasheet:

Available download format

Mosfet Array 2 N-Channel (Dual) 30V 4A 3.12W Surface Mount 1206-8 ChipFET™

More Information
CategoryTransistors - FETs, MOSFETs - Arrays
ManufacturerVishay Siliconix
RoHS 1
PackagingTape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package 1206-8 ChipFET™
Base Product Number SI5902
Package / Case8-SMD, Flat Lead
SeriesTrenchFET®
Current - Continuous Drain (Id) @ 25°C 4A
Rds On (Max) @ Id, Vgs 65mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
FET FeatureLogic Level Gate
FET Type2 N-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Input Capacitance (Ciss) (Max) @ Vds 220pF @ 15V
Power - Max 3.12W
Other NamesSI5902BDC-T1-GE3TR
SI5902BDC-T1-GE3CT
SI5902BDC-T1-GE3DKR
SI5902BDCT1GE3

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