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Bipolar (BJT) Transistor PNP 80 V 800 mA - 625 mW Through Hole TO-92
Category | Transistors - Bipolar (BJT) - Single | |
Manufacturer | NTE Electronics, Inc | |
RoHS | 1 | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-92 | |
Series | - | |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 10V | |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA | |
Frequency - Transition | - | |
Current - Collector Cutoff (Max) | 50nA (ICBO) | |
Voltage - Collector Emitter Breakdown (Max) | 80 V | |
Current - Collector (Ic) (Max) | 800 mA | |
Transistor Type | PNP | |
Power - Max | 625 mW | |
Other Names | 2368-NTE159 |
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