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Bipolar (BJT) Transistor NPN 90 V 4 A 8MHz 40 W Through Hole TO-220
Category | Transistors - Bipolar (BJT) - Single | |
Manufacturer | NTE Electronics, Inc | |
RoHS | 1 | |
Operating Temperature | 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-220 | |
Series | - | |
Package / Case | TO-220-3 | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 500mA, 5V | |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 300mA, 3A | |
Frequency - Transition | 8MHz | |
Current - Collector Cutoff (Max) | 20µA (ICBO) | |
Voltage - Collector Emitter Breakdown (Max) | 90 V | |
Current - Collector (Ic) (Max) | 4 A | |
Transistor Type | NPN | |
Power - Max | 40 W | |
Other Names | 2368-NTE152 |
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