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Bipolar (BJT) Transistor NPN 160 V 1 A 100MHz 900 mW Through Hole TO-92-3
Category | Transistors - Bipolar (BJT) - Single | |
Manufacturer | onsemi | |
RoHS | 1 | |
Operating Temperature | 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-92-3 | |
Base Product Number | KSC2383 | |
Series | - | |
Package / Case | TO-226-3, TO-92-3 Long Body (Formed Leads) | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 200mA, 5V | |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 50mA, 500mA | |
Frequency - Transition | 100MHz | |
Current - Collector Cutoff (Max) | 1µA (ICBO) | |
Voltage - Collector Emitter Breakdown (Max) | 160 V | |
Current - Collector (Ic) (Max) | 1 A | |
Transistor Type | NPN | |
Power - Max | 900 mW | |
Other Names | 2156-KSC2383YTA-OS KSC2383YTACT KSC2383YTATB KSC2383YTA-ND FAIFSCKSC2383YTA |
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