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Bipolar (BJT) Transistor NPN 160 V 1.2 A 155MHz 1.2 W Through Hole TO-126-3
Category | Transistors - Bipolar (BJT) - Single | |
Manufacturer | onsemi | |
RoHS | 1 | |
Operating Temperature | 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-126-3 | |
Base Product Number | KSC2690 | |
Series | - | |
Package / Case | TO-225AA, TO-126-3 | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 300mA, 5V | |
Vce Saturation (Max) @ Ib, Ic | 700mV @ 200mA, 1A | |
Frequency - Transition | 155MHz | |
Current - Collector Cutoff (Max) | 1µA (ICBO) | |
Voltage - Collector Emitter Breakdown (Max) | 160 V | |
Current - Collector (Ic) (Max) | 1.2 A | |
Transistor Type | NPN | |
Power - Max | 1.2 W |
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